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| NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H1008 ABSOLUTE MAXIMUM RATINGSTa=25 T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 PC----Collector Dissipation.......................................800mW VCBO----Collector-Base Voltage....................................80V VCEO----Collector-Emitter Voltage.................................60V V EB O ----Emitter-Base Voltage....................................8V I C ----Collector Current..........................................700mA 1EmitterE 2BaseB 3Collector C TO-92 ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Collector Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO fT Cob 100 100 40 0.2 0.86 80 60 8 30 50 8 400 0.4 1.1 nA nA V V V V V MHz pF VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=500mA, IB=50mA IC=500mA, IB=50mA IC=100A, IE=0 IC=10mA, IB=0 IE=10AIC=0 VCE=10V, IC=50mA VCB=10V, IE=0f=1MHz Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product Output Capacitance hFE Classification R 40--80 O 70--140 Y 120--240 GR 240--400 Shantou Huashan Electronic Devices Co.,Ltd. H1008 |
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